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42 pcs
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42 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor (BJT) from Microchip Technology, part number JANHCB2N3700, is designed for general-purpose applications. It features a collector-emitter breakdown voltage of 80V and can handle a maximum collector current of 1A. The transistor has a maximum power dissipation of 500mW.
Packaged in a TO-18 (TO-206AA) through-hole case, this component is suitable for various electronic circuits. Its saturation voltage is specified at 500mV at 50mA collector current and 500mA base current, with a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V Vce. The collector cutoff current is a maximum of 10nA.
This transistor is a reliable choice for applications requiring moderate voltage and current handling capabilities. Its through-hole mounting makes it easy to integrate into breadboard prototypes or permanent PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 80V.
The maximum collector current (Ic) is 1A.
The maximum power dissipation is 500mW.
The package is TO-18 (TO-206AA) with through-hole mounting.
The minimum DC current gain (hFE) is 100 at 150mA collector current and 10V Vce.
