| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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144 pcs
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144 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The Microchip Technology JANHCB2N3700 is a single NPN bipolar junction transistor (BJT) housed in a TO-18 (TO-206AA) package. This component is designed for through-hole mounting.
Key electrical specifications include a maximum collector current (Ic) of 1A and a collector-emitter breakdown voltage (Vce) of 80V. The transistor exhibits a Vce saturation of 500mV at 50mA collector current and 500mA base current, with a maximum collector cutoff current of 10nA. Its DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V collector-emitter voltage. The maximum power dissipation is rated at 500mW.
This transistor is suitable for general-purpose amplification and switching applications where its specific voltage and current ratings are beneficial. The TO-18 package is a standard metal can package, often used in through-hole circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the JANHCB2N3700 is 1 A.
The collector-emitter breakdown voltage (Vce) for the JANHCB2N3700 is 80 V.
The JANHCB2N3700 comes in a TO-18 (TO-206AA) package.
The JANHCB2N3700 is designed for through-hole mounting.
