| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3700 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 80V, a maximum collector current (Ic) of 1A, and a maximum power dissipation of 500mW. The DC current gain (hFE) is a minimum of 50 at a test condition of 500mA collector current and 10V collector-emitter voltage. The collector-emitter saturation voltage (Vce sat) is a maximum of 500mV at a base current of 50mA and collector current of 500mA.
The transistor is housed in a TO-206AA / TO-18-3 metal can package and is designed for through-hole mounting. The supplier device package is TO-18. It can operate over a junction temperature range of -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.77 | $4.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 80V.
The maximum collector current (Ic) is 1A.
The 2N3700 comes in a TO-206AA / TO-18-3 metal can package, with a supplier device package of TO-18. It is a through-hole mounting type.
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain (hFE) is 50 at a test condition of 500mA collector current and 10V collector-emitter voltage.
The maximum power dissipation is 500mW.
The maximum collector-emitter saturation voltage (Vce sat) is 500mV at a base current of 50mA and collector current of 500mA.