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2N3638

The 2N3638 is a PNP bipolar transistor from On Semiconductor designed for switching and general-purpose applications. It offers a maximum collector current of 800mA and a collector-emitter voltage of 25V.

✓ Total Stock: 2 pcs

$ Price Range: $0.99

2N3638 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Speed Components Ltd ✓ Non-Authorised Inventory information	2 pcs On Request	2 pcs	On Request	1	On Request	On Request	77+	On Request	On Request

2N3638 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	On Semiconductor

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2N3638 Description

Short technical summary and product information.

The 2N3638 is a PNP bipolar junction transistor manufactured by On Semiconductor, suitable for both switching and general-purpose applications. This component is rated for a maximum collector current of 800mA and a maximum collector-emitter voltage of 25V.

With a maximum power dissipation of 300mW, the 2N3638 is designed for moderate power handling. Its maximum operating temperature is 150°C, allowing for use in various environmental conditions.

This transistor falls under the category of discrete semiconductor products, specifically within the single bipolar junction transistor sub-group. Its specifications make it a versatile component for electronic circuit designs requiring PNP transistor functionality.

2N3638 Quick Information

Product Type: Bipolar Transistor

Canonical Name: 2N3638 PNP Switching and General Purpose Transistor

Subcategory: Single

2N3638 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2N3638 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3638 Features

PNP switching and general purpose transistor.
Maximum collector current is 800mA.
Collector-emitter voltage is 25V.
Maximum power dissipation is 300mW.
Maximum operating temperature is 150°C.

2N3638 Applications

Switching and general purpose applications
Used in low power amplification circuits
Suitable for signal processing modules
Ideal for portable electronic devices

2N3638 FAQs

4 frequently asked questions generated from this part’s specifications.

What is the maximum collector current for the 2N3638?

The maximum collector current for the 2N3638 is 800mA.

What is the maximum collector-emitter voltage of the 2N3638 transistor?

The maximum collector-emitter voltage for the 2N3638 is 25V.

What is the maximum power dissipation for the 2N3638?

The maximum power dissipation for the 2N3638 is 300mW.

What is the maximum operating temperature for the 2N3638?

The maximum operating temperature for the 2N3638 is 150°C.