LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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181 pcs
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181 pcs | On Request | 1 | On Request | On Request | 1311 | On Request | On Request |
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The 2N3637J is a high-frequency silicon bipolar transistor designed for various electronic applications. Manufactured by MSC, this component features a transition frequency (fT) of 30 MHz, indicating its suitability for high-frequency circuits.
Key electrical characteristics include a minimum collector-emitter breakdown voltage of 175V and a maximum collector current of 1000 mA. The static current gain (hFE) ranges from a minimum of 50 to a maximum of 200. The maximum power dissipation is rated at 300 mW.
This transistor is housed in a TO-92 package and is designed for through-hole mounting. Its specifications make it a viable option for signal amplification and switching applications where high-frequency performance is required.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 175V.
The minimum collector-base breakdown voltage is 175V.
The maximum collector current is 1A (1000 mA).
The maximum power dissipation is 300mW.
The current gain ranges from 50 to 200 at 10mA, 10V.
The minimum transition frequency is 30MHz.
The transistor is housed in a TO-92 through-hole package.
