| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N3637 is a PNP Silicon Transistor housed in a hermetically sealed TO-39 package. This transistor is engineered for versatile use in general-purpose amplification and high-voltage switching applications.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 175V and a Continuous Collector Current (IC) of 1.0A. The device offers a maximum Power Dissipation (PD) of 1.0W at ambient temperature and up to 5.0W when the case temperature is maintained at 25°C. The operating and storage junction temperature range is from -65°C to +200°C.
With a thermal resistance (ΘJA) of 175°C/W and (ΘJC) of 35°C/W, the 2N3637 is suitable for various electronic designs. Its TO-39 package facilitates through-hole mounting.
Electrical specifications detail parameters such as breakdown voltages, saturation voltages, and current gain (hFE) which ranges from 80 to 320 under specific test conditions. The transition frequency (fT) is 200 MHz at 30V and 30mA. Capacitance values like Cob and Cib are also specified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) for the 2N3637 is 175V.
The maximum Continuous Collector Current (IC) for the 2N3637 is 1.0A.
The 2N3637 transistor is supplied in a TO-39 package.
The operating and storage junction temperature range for the 2N3637 is -65°C to +200°C.