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2N3637 The 2N3637 is a PNP silicon transistor designed for general purpose amplification and high voltage switching. It features a collector-emitter voltage of 175V and a maximum collector current of 1A.
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2N3637

Available from 2 distributors
Mfr Name: Motorola Semicondutor
Motorola Semicondutor
The 2N3637 is a PNP silicon transistor designed for general purpose amplification and high voltage switching. It features a collector-emitter voltage of 175V and a maximum collector current of 1A.
✓ Total Stock: 104 pcs
$ Price Range: $0.77

2N3637 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Partservice ✓
Non-Authorised Inventory information
79 pcs
On Request
79 pcs On Request 1 On Request On Request On Request On Request On Request
Husky International Electronic ✓
Non-Authorised Inventory information
25 pcs
On Request
25 pcs On Request 1 On Request On Request N/A On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N3637 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2N3637 Description

Short technical summary and product information.

The 2N3637 is a PNP silicon transistor mounted in a hermetically sealed TO-39 package. It is suitable for general purpose amplifier and high voltage switching applications. The device can operate with collector-base and collector-emitter voltages of up to 175V, and a maximum collector current of 1A. Its electrical characteristics include a saturation voltage of 0.3V at 10mA collector current and a current gain (hFE) ranging from 80 to 300 depending on test conditions. The transistor's thermal resistance values are 175°C/W (junction to ambient) and 35°C/W (junction to case). It is RoHS3 compliant and has a moisture sensitivity level of 1. The package type is TO-39, suitable for through-hole mounting in various electronic circuits.

2N3637 Quick Information

Product Type: PNP Silicon Transistor
Canonical Name: 2N3637 PNP Silicon Transistor

2N3637 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3637 Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3637 Features

  • High collector-emitter voltage of 175V
  • Maximum collector current of 1A
  • Hermetically sealed TO-39 package
  • RoHS3 compliant and moisture resistant
  • High current gain (hFE up to 300)

2N3637 Applications

  • Used in high voltage switching circuits
  • Suitable for general purpose amplification
  • Ideal for electronic switching applications
  • Mounted in TO-39 through-hole packages

2N3637 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2N3637?

The collector-emitter voltage rating is 175V.

What is the maximum collector current for the 2N3637?

The maximum collector current is 1A.

Is the 2N3637 RoHS compliant?

Yes, it is RoHS3 compliant.

What package does the 2N3637 come in?

It comes in a hermetically sealed TO-39 package.

What is the operating junction temperature range for the 2N3637?

The operating and storage junction temperature range is -65°C to +200°C.

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