SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 2N3637 is a PNP Silicon Transistor manufactured by Texas Instruments, housed in a hermetically sealed TO-39 package. This transistor is engineered for general-purpose amplification and high-voltage switching applications.
Key electrical characteristics include a maximum Collector-Emitter Voltage (VCEO) of 175V and a Continuous Collector Current (IC) of 1.0A. The device offers a maximum Power Dissipation (PD) of 1.0W at ambient temperature and up to 5.0W when the case temperature is 25°C. Its operating and storage junction temperature range is from -65°C to +200°C.
Further specifications include a minimum DC current gain (hFE) ranging from 80 to 300 depending on the collector current, and a transition frequency (fT) of 200MHz. Saturation voltages like VCE(SAT) are specified at 0.3V and 0.5V under different current conditions. The transistor also features input capacitance (Cib) of 75pF and output capacitance (Cob) of 10pF.
The 2N3637 is suitable for various electronic circuits requiring reliable amplification or switching capabilities. Its TO-39 package is designed for through-hole mounting.
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3637 is 175V.
The continuous collector current (IC) rating for the 2N3637 is 1.0A.
The 2N3637 is supplied in a TO-39 package.
The operating junction temperature range for the 2N3637 is -65°C to +200°C.
The minimum DC current gain (hFE) at 10mA collector current is 100.
The transition frequency (fT) of the 2N3637 is 200MHz.