| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The 2N3636 is a PNP bipolar junction transistor manufactured by Microchip Technology, designed for general-purpose switching and amplifier applications. The transistor is rated for a maximum collector-emitter voltage (Vceo) of 175V and a maximum collector current (Ic) of 1A, with a power dissipation of 1W. It offers a minimum DC current gain (hFE) of 50 at Ic=50mA, Vce=10V, and a low Vce saturation voltage of 600mV at Ib=5mA, Ic=50mA.
The device supports a wide operating junction temperature range from -65°C to 200°C, making it suitable for harsh environment applications. The 2N3636 is packaged in a TO-205AD (TO-39-3) metal can, which provides robust mechanical protection and efficient heat dissipation. It is designed for through-hole mounting, simplifying integration into various circuit boards.
Typical applications include linear amplifiers, driver stages, and medium-power switching circuits in industrial and commercial systems. The 2N3636 is a reliable choice for designs requiring a PNP transistor with moderate voltage and current capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $11.93 | $11.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Vceo is 175V.
The 2N3636 is available in a TO-205AD (TO-39-3 Metal Can) through-hole package.
The operating junction temperature range is -65°C to 200°C.
It is listed as RoHS3 compliant, but the compliance status is unverified.
The minimum hFE is 50 at Ic=50mA and Vce=10V.
The maximum Vce saturation voltage is 600mV at Ib=5mA and Ic=50mA.
The maximum collector current (Ic) is 1A.