| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Thermal Resistance |
The 2N3635 is a PNP Silicon Transistor manufactured by Amphenol ICC, suitable for high voltage switching and low power amplifier applications. This transistor is housed in a TO-39 Metal Can package.
Key electrical characteristics include a Collector Emitter Voltage (VCEO) of up to 175V for the 2N3636/2N3637 variants and 140V for the 2N3635. The maximum Collector Current (IC) is rated at 1A. Power dissipation is 1W at ambient temperature (Ta=25ºC) and 5W at case temperature (Tc=25ºC).
Thermal properties include a Junction to Ambient thermal resistance (Rth(j-a)) of 175 °C/W and a Junction to Case thermal resistance (Rth(j-c)) of 35 °C/W. The operating and storage junction temperature range is -65 to +200°C.
This device is also available in Defence/Military, JanXXX, and Hirel grades, indicating its suitability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 140V.
The 2N3635 is available in a TO-39 metal can package.
-65°C to +200°C.
1A.
1W at 25°C ambient, 5W at 25°C case.
Minimum 80 at IC=2mA, VCE=10V.
200MHz typical at IC=30mA, VCE=30V.