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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 9449 | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3635 is a PNP Silicon Transistor manufactured by Motorola Semiconductor, suitable for high voltage switching and low power amplifier applications. This device comes in a TO-39 metal can package.
Key electrical characteristics include a Collector Emitter Voltage (VCEO) of up to 175V and a continuous Collector Current (IC) of 1A. The transistor offers a maximum power dissipation of 1W at 25°C ambient temperature and 5W at 25°C case temperature. Its operating and storage junction temperature range is from -65°C to +200°C.
With a transition frequency (fT) of up to 200 MHz, the 2N3635 is capable of handling moderate frequencies. The DC Current Gain (hFE) varies depending on the collector current, ranging from 80 to 300 at specific test conditions. The input impedance (hie) is typically between 200 to 1200 Ohms.
This transistor is designed for applications requiring reliable high voltage switching and amplification in a robust metal can package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector Emitter Voltage (VCEO) for the 2N3635 is 140V.
The maximum Collector Emitter Voltage (VCEO) for the 2N3636 and 2N3637 is 175V.
The continuous Collector Current (IC) rating for these transistors is 1A.
The power dissipation (PD) at 25°C ambient temperature is 1W.
The power dissipation (PD) at 25°C case temperature is 5W.
The operating and storage junction temperature range is -65°C to +200°C.
The transition frequency (fT) for the 2N3635 is typically 200 MHz.