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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3635 is a PNP bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring medium voltage and current handling.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 140V, a maximum collector current (Ic) of 1A, and a power dissipation (Pd) of 1W. The DC current gain (hFE) is a minimum of 100 at Ic=50mA and Vce=10V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 600mV at Ib=5mA and Ic=50mA.
The transistor is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting. The operating junction temperature range spans from -65°C to 200°C, making it suitable for rugged environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.24 | $9.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
140V.
1A.
1W maximum.
Minimum 100 at Ic=50mA, Vce=10V.
Maximum 600mV at Ib=5mA, Ic=50mA.
TO-205AD/TO-39-3 metal can through-hole package (supplier package TO-39).
-65°C to 200°C junction temperature.