| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present |
The 2N3585 is an NPN Power Silicon Transistor from VPT Components, available in a TO-66 package. This transistor is engineered for high-speed switching and high-voltage amplifier applications.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 300V for the 2N3585 variant and 250V for the 2N3584. It can handle a continuous collector current (IC) of up to 2A and a base current (IB) of 1A. The saturated collector-emitter voltage (VCE(SAT)) is a maximum of 0.75V at 1A collector current and 0.125A base current. The forward current transfer ratio (hFE) ranges from 25 to 100 at 1A and 40 to 100 at 100mA.
Dynamic characteristics include a small-signal forward current transfer ratio (|hFE|) between 3.0 and 15 at 5MHz, and an open-circuit output capacitance (Cobo) of up to 120pF. The transistor also features a second breakdown collector current (SBIc) of 350mA at 100V VCE.
With a total power dissipation of 2.5W at ambient temperature and 35W at case temperature, and a junction-to-case thermal resistance of 5.0°C/W, the 2N3585 is suitable for power applications. The operating temperature range is -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3585 has a maximum collector-emitter voltage (VCEO) of 300V.
The 2N3585 has a maximum collector current (IC) rating of 2A.
The 2N3585 dissipates up to 35W at a case temperature of 25°C.
The 2N3585 is housed in a TO-66 package.
The 2N3585 operates and can be stored from -65°C to +200°C.
The DC current gain (hFE) of the 2N3585 is 40 to 100 at a collector current of 100mA and VCE of 10V.
