| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RCA 2N3585 is an NPN Power Silicon Transistor designed for high speed switching and high voltage amplifier applications. It features a Collector-Emitter Breakdown Voltage (VCEO) of up to 300V for the 2N3585 variant and a maximum Collector Current (IC) of 2A.
This transistor is housed in a TO-66 package, suitable for various power applications. Key electrical characteristics include a maximum Collector-Emitter Saturation Voltage (VCE(SAT)) of 0.75V and a minimum Forward Current Transfer Ratio (hFE) of 25 at 1A.
The device also offers a high magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio (|hFE|) of 3.0 at 5MHz, indicating good high-frequency performance. The Open Circuit Output Capacitance (Cobo) is a maximum of 120pF.
With a maximum Total Power Dissipation (PT) of 35W at 25°C case temperature, the 2N3585 is suitable for demanding applications. The operating temperature range is from -65°C to +200°C.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Breakdown Voltage (VCEO) for the 2N3585 is 300 V dc.
The maximum Collector Current (IC) for the 2N3585 is 2 A dc.
The 2N3585 transistor is in a TO-66 package.
The maximum Collector-Emitter Saturation Voltage (VCE(SAT)) for the 2N3585 is 0.75 V dc.
The minimum Forward Current Transfer Ratio (hFE1) at IC = 1A dc is 25.
The minimum Forward Current Transfer Ratio (hFE2) at IC = 100 mA dc is 40, and the maximum is 100.
The maximum Open Circuit Output Capacitance (Cobo) for the 2N3585 is 120 pF.