2N3585

The 2N3585 is an NPN high power silicon bipolar junction transistor manufactured by NTE Electronics. It is qualified per MIL-PRF-19500/384 and available in JAN, JANTX, and JANTXV levels. This transistor features a maximum collector-emitter voltage (Vceo) of 300V and a maximum collector current (Ic) of 2A. It can dissipate up to 35W at case temperature 25°C (derated linearly above 25°C). The DC current gain (hFE) ranges from 25 to 100 at 1A collector current and 10V Vce. The collector-emitter saturation voltage is typically 0.75V at 1A collector current and 125mA base current. The device is designed for high-power switching and amplification applications. It is packaged in a TO-66 (TO-213AA) through-hole metal can package, suitable for chassis mounting. The operating junction temperature range is -65°C to 200°C. The thermal resistance junction-to-case is 5.0°C/W. The transistor also features a base current rating of 1A and emitter-base voltage of 6V. Switching times are specified with turn-on time of 3µs and turn-off time of 7µs under test conditions. Output capacitance is 120pF. The device is RoHS3 compliant and REACH unaffected (unverified).