| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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88,250 pcs
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88250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics 2N3584 is a silicon NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage (Vceo) of 250V and a continuous collector current (Ic) rating of 2A, making it suitable for medium-power circuits.
Electrical characteristics include a minimum DC current gain (hFE) of 25 at 1A collector current and 10V collector-emitter voltage. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 750mV at 1A collector current and 125mA base current. The device can dissipate up to 35W of power.
The transistor is packaged in a TO-66 (TO-213AA) through-hole metal case, which provides robust mechanical support and efficient heat transfer. It operates over a junction temperature range of -65°C to 200°C.
The collector-emitter breakdown voltage (Vceo) is 250V.
The maximum continuous collector current (Ic) is 2A.
It uses a TO-66 (TO-213AA) through-hole package.
The junction operating temperature range is -65°C to 200°C.
The power dissipation (Pd) is 35W.