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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Supplier Device Package | |
| Transistor Type | |
| Voltage |
The 2N3563 is an NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (Vceo) of 12V and a minimum DC current gain (hFE) of 20 at 8mA collector current and 10V Vce. The transistor offers a transition frequency (ft) of 600MHz, making it suitable for high-frequency switching and amplification applications. The maximum collector-base leakage current (Icbo) is 50nA. The device is packaged in a TO-106-3 Domed through-hole package, suitable for manual or automated insertion on printed circuit boards. The mounting type is through hole, and the supplier device package is TO-106.
12V.
TO-106-3 Domed through-hole package.
RoHS3 Compliant (unverified).
Minimum 20 at 8mA collector current and 10V Vce.
600MHz.
Maximum 50nA.