| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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72 pcs
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72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Vishay Dale 2N3507 is an NPN Silicon Epitaxial Planar Transistor engineered for general purpose switching applications. This component is housed in a JEDEC TO-39 case, a common package for discrete transistors.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of up to 3A. The device offers a maximum power dissipation of 1W at ambient temperature, and up to 5W when the case temperature is maintained at 25°C. Its thermal resistance (junction-to-ambient) is 175 °C/W, and junction-to-case is 35 °C/W.
With a transition frequency (fT) of 60 MHz at 5V and 100mA, the 2N3507 is suitable for various switching tasks. The DC current gain (hFE) ranges from 35 to 150 depending on the operating conditions. The operating and storage junction temperature range is from -65°C to +200°C.
The TO-39 package is designed for through-hole mounting. The transistor has three leads, typically identified as Emitter, Base, and Collector.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3507 is 40V.
The maximum continuous collector current (IC) for the 2N3507 is 3A.
The 2N3507 transistor is supplied in a TO-39 package.
The operating and storage junction temperature range for the 2N3507 is -65°C to +200°C.
The transition frequency (fT) of the 2N3507 is a minimum of 60 MHz at 5.0V and 100mA.