| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
146 pcs
|
146 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The Central Semiconductor 2N3507 is an NPN Silicon Epitaxial Planar Transistor designed for general purpose switching applications. This component is housed in a JEDEC TO-39 package, suitable for through-hole mounting.
Key electrical characteristics include a collector-base voltage (BVCBO) of 60V and a collector-emitter voltage (BVCEO) of 40V. The transistor can handle a continuous collector current (IC) of up to 3A. Power dissipation is rated at 1W at ambient temperature and 5W at case temperature (25°C).
Thermal management is supported by a junction-to-ambient thermal resistance (ΘJA) of 175 °C/W and a junction-to-case thermal resistance (ΘJC) of 35 °C/W. The operating and storage junction temperature range is -65°C to +200°C.
This transistor is designed for reliable performance in various switching circuits. Its specifications make it a versatile component for electronic designs requiring moderate power handling and voltage ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage of the 2N3507 is 60V.
The 2N3507 is packaged in a TO-39 case.
The maximum collector current is 3A.
The transition frequency (fT) is at least 60MHz.
The junction temperature range is from -65°C to +200°C.