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2N3507 2N3507 is an NPN power silicon transistor from Microchip Technology, rated for 50V Vce, 3A collector current, and 1W power dissipation. It comes in a TO-39 metal can package.
Mfr Part #:

2N3507

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
2N3507 is an NPN power silicon transistor from Microchip Technology, rated for 50V Vce, 3A collector current, and 1W power dissipation. It comes in a TO-39 metal can package.
Total Stock: 3,840 pcs
$ Price Range: $26.28

2N3507 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,500 pcs
3500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
340 pcs
340 pcs On Request 1 On Request On Request On Request On Request On Request

2N3507 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2N3507 Description

Short technical summary and product information.

The 2N3507 is an NPN bipolar junction transistor designed for power switching and amplification applications. It features a maximum collector-emitter voltage of 50V, a continuous collector current of 3A, and a power dissipation of 1W. The DC current gain (hFE) is a minimum of 35 at 500mA collector current and 1V Vce. The saturation voltage is a maximum of 1.5V at 250mA base current and 2.5A collector current. The transistor is housed in a TO-205AD / TO-39-3 metal can package with through-hole mounting, suitable for socketed or soldered board assembly. It operates over a junction temperature range of -65°C to 200°C, making it suitable for harsh environments.

2N3507 Quick Information

Product Type: NPN Bipolar Junction Transistor (BJT)
Canonical Name: 2N3507 NPN Power Silicon Transistor
Subcategory: Single NPN

2N3507 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3507 Estimated Pricing

Qty Low High
1+ $26.28 $26.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3507 Features

  • NPN silicon transistor for power switching.
  • Rated for 50V collector-emitter voltage.
  • Supports 3A continuous collector current.
  • 1W maximum power dissipation capability.
  • TO-39 metal can through-hole package.

2N3507 Applications

  • Used in power switching circuits.
  • Suitable for amplifier driver stages.
  • Ideal for general-purpose medium-power applications.

2N3507 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vce) of the 2N3507?

50V.

What is the maximum collector current (Ic) of the 2N3507?

3A.

What is the power dissipation of the 2N3507?

1W.

What is the package type of the 2N3507?

TO-205AD / TO-39-3 metal can, with supplier device package TO-39.

What is the operating temperature range of the 2N3507?

-65°C to 200°C (junction).

Is the 2N3507 RoHS compliant?

According to unverified data, it is RoHS3 compliant, but there is a conflict with distributor data. Verification with the manufacturer is recommended.

What is the DC current gain (hFE) of the 2N3507?

Minimum 35 at 500mA collector current and 1V Vce.

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