| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,750 pcs
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2750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3506 is a single NPN bipolar junction transistor manufactured by Microchip Technology. It belongs to the category of discrete semiconductor products and is intended for general-purpose amplification, switching, and signal conditioning in through-hole circuits.
Key electrical specifications include a collector-emitter voltage rating of 40V, a collector current rating of 500mA, and a power dissipation rating of 1W. The minimum DC current gain (hFE) is 40 at Ic=1.5A and Vce=2V, while the maximum collector-emitter saturation voltage is 500mV at Ib=50mA and Ic=500mA.
The device is supplied in a TO-205AD / TO-39-3 metal can package, also referenced as TO-39, with through-hole mounting. It operates over a junction temperature range of -65°C to 200°C, making it suitable for a wide range of temperature environments.
For design engineers, the 2N3506 offers a balanced combination of moderate voltage, current, and power handling in a durable metal can package. The through-hole form factor simplifies prototyping and manual assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.57 | $13.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3506 is an NPN bipolar junction transistor.
The collector-emitter voltage rating is 40V.
The maximum collector current is 500mA.
The power dissipation rating is 1W.
It is available in TO-205AD/TO-39-3 metal can (TO-39) with through-hole mounting.
-65°C to 200°C (junction temperature).
The minimum hFE is 40 at Ic=1.5A, Vce=2V.