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2N3501 2N3501 is an NPN bipolar junction transistor rated for 150V collector-emitter voltage and 300mA collector current. It is housed in a TO-205AD (TO-39) through-hole package and dissipates up to 1W.
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2N3501

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
2N3501 is an NPN bipolar junction transistor rated for 150V collector-emitter voltage and 300mA collector current. It is housed in a TO-205AD (TO-39) through-hole package and dissipates up to 1W.
✓ Total Stock: 5,757 pcs

2N3501 Available from 1 distributor

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Components Technology Group, Inc. ✓
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5,757 pcs
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2N3501 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Voltage
Weight
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2N3501 Description

Short technical summary and product information.

The 2N3501 is an NPN silicon epitaxial planar transistor designed for general purpose medium power applications requiring high frequency switching. It is part of the JEDEC registered 2N3498-2N3501 series and is available in a TO-205AD (TO-39) metal can package with through-hole mounting.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 150V, collector-base voltage (VCBO) of 150V, and emitter-base voltage (VEBO) of 6V. The continuous collector current (Ic) is 300mA and total power dissipation is 1W at 25°C case temperature. DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V VCE. The transition frequency (fT) is 150 MHz.

 

The device operates over a junction temperature range of -65°C to 200°C, with thermal resistance junction-to-case of 30°C/W and junction-to-ambient of 175°C/W. Termination is available in solder dip (Sn63/Pb37) or pure matte tin (RoHS) options, though RoHS compliance is limited to commercial grade variants and has not been independently verified.

2N3501 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N3498-2N3501
Canonical Name: 2N3501 NPN Bipolar Transistor
Subcategory: Bipolar (BJT) Transistors

2N3501 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2N3501 Features

  • NPN silicon transistor for general purpose.
  • Rated for 150V collector-emitter voltage.
  • Continuous collector current up to 300mA.
  • Power dissipation of 1 watt.
  • Operates from -65°C to 200°C.

2N3501 Applications

  • Suitable for medium power switching circuits.
  • Ideal for high frequency amplifier stages.
  • Used in military and high-reliability systems.
  • General purpose transistor for through-hole designs.

2N3501 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type and polarity of the 2N3501?

The 2N3501 is an NPN silicon bipolar junction transistor.

What is the maximum collector-emitter voltage (VCEO) of the 2N3501?

The maximum collector-emitter voltage is 150 V.

What is the maximum collector current rating?

The collector current (Ic) is rated at 300 mA continuous.

What is the power dissipation capability of the 2N3501?

Total power dissipation is 1 W at 25°C case temperature.

What package does the 2N3501 come in?

The 2N3501 is available in a TO-205AD (TO-39-3) metal can through-hole package.

What is the operating temperature range of the 2N3501?

The junction temperature range is -65°C to 200°C.

Is the 2N3501 RoHS compliant?

RoHS compliant versions are available for commercial grade only per the datasheet, but the compliance status has not been independently verified.

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