| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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187 pcs
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187 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3495 is a general purpose PNP silicon bipolar junction transistor (BJT) manufactured by SES Sterling. It is designed for a wide range of electronic applications requiring reliable amplification and switching capabilities.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 120V. The transistor is housed in a standard TO-39 (TO-205AD) metal can package, suitable for through-hole mounting. This package provides good thermal dissipation for moderate power applications.
As a general-purpose transistor, the 2N3495 can be utilized in various circuit designs, including amplification stages, switching circuits, and signal processing. Its PNP silicon construction ensures robust performance in typical operating conditions. Further specifications regarding continuous collector current, device dissipation at different temperatures, and other parameters are available in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3495 is 120V.
The 2N3495 is available in a TO-39 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.