| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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426 pcs
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426 pcs | On Request | 1 | On Request | On Request | 90+ | On Request | On Request | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3467 is a PNP Silicon Switching Transistor manufactured by Motorola Semiconductor. It is designed for switching applications and offers a maximum collector-emitter voltage (VCEO) of 40 Vdc and a maximum collector current (IC) of 1 Adc.
Key electrical characteristics include a minimum forward-current transfer ratio (hFE) of 25 at 500 mAdc and 1.0 Vce, and a collector-emitter saturation voltage (VCE(sat)) of up to 1.2 Vdc at 1.0 Adc and 100 mAdc base current. The transistor also exhibits dynamic characteristics such as an output capacitance (Cobo) of 25 pF and an extrapolated unity gain frequency (ft) of 150 MHz.
This transistor is available in a TO-39 package. The operating and storage junction temperature range is -55 to +175 °C.
Qualified per MIL-PRF-19500/348, the 2N3467 is suitable for applications requiring reliable switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N3467 is 40 Vdc.
The maximum collector current (IC) for the 2N3467 is 1 Adc.
The operating and storage junction temperature range for the 2N3467 is -55 to +175 °C.
The 2N3467 is available in a TO-39 package.
The minimum forward-current transfer ratio (hFE) at 150 mAdc and 1.0 Vce is 40.
The output capacitance (Cobo) is 25 pF under the test condition of VCB = 10 Vdc, IE = 0, and frequency between 100 kHz and 1.0 MHz.
The RoHS status is RoHS3 Compliant.