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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-Off Time (toff) | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The 2N3440 is an NPN epitaxial planar silicon transistor designed for medium power, high-frequency switching applications. It features a maximum collector-emitter voltage of 250V and a maximum collector current of 1A, with a transition frequency of 15MHz. The device offers low saturation voltage (500mV max at 50mA) and fast switching times (1µs turn-on, 10µs turn-off).
Power dissipation is rated at 0.8W at ambient temperature and 5W at case temperature, with a maximum junction temperature of 200°C. The transistor is housed in a TO-205AD (TO-39) metal can package with through-hole mounting, suitable for high-reliability and military-grade applications.
This part is commonly used in general purpose switching and amplifier circuits where moderate voltage and current handling are required. The 2N3440 is also available in JAN, JANTX, JANTXV, and JANS qualified versions per MIL-PRF-19500/368.
250V
1A
TO-205AD (TO-39) metal can, through-hole mounting
-65°C to +200°C
RoHS3 compliant (unverified, low confidence)
15 MHz
Minimum 40 at Ic=20mA, Vce=10V