2N3440 NPN bipolar transistor, 250V collector-emitter voltage, 1A collector current, 15MHz transition frequency, in a TO-39 through-hole metal can package.
Mfr Part #:

2N3440

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar transistor, 250V collector-emitter voltage, 1A collector current, 15MHz transition frequency, in a TO-39 through-hole metal can package.
Total Stock: 55 pcs

2N3440 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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50 pcs
50 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5 pcs
5 pcs On Request 1 On Request On Request On Request On Request On Request

2N3440 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Military Grade
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TC=25 °C)
Power Dissipation (Maximum) @ TA=25°C
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Turn-Off Time (toff)
Turn-On Time (ton)
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2N3440 Description

Short technical summary and product information.

The 2N3440 is an NPN epitaxial planar silicon transistor designed for medium power, high-frequency switching applications. It features a maximum collector-emitter voltage of 250V and a maximum collector current of 1A, with a transition frequency of 15MHz. The device offers low saturation voltage (500mV max at 50mA) and fast switching times (1µs turn-on, 10µs turn-off).

 

Power dissipation is rated at 0.8W at ambient temperature and 5W at case temperature, with a maximum junction temperature of 200°C. The transistor is housed in a TO-205AD (TO-39) metal can package with through-hole mounting, suitable for high-reliability and military-grade applications.

 

This part is commonly used in general purpose switching and amplifier circuits where moderate voltage and current handling are required. The 2N3440 is also available in JAN, JANTX, JANTXV, and JANS qualified versions per MIL-PRF-19500/368.

2N3440 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N3440
Canonical Name: 2N3440 NPN Bipolar Transistor
Subcategory: Single BJT

2N3440 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

2N3440 Features

  • 250V maximum collector-emitter voltage.
  • 1A maximum collector current rating.
  • 15MHz transition frequency for switching.
  • Low saturation voltage of 500mV.
  • TO-39 through-hole metal can package.

2N3440 Applications

  • General purpose medium power switching circuits.
  • High-frequency amplifier stages up to 15MHz.
  • Military and high-reliability electronic systems.
  • Low profile switching power supply designs.

2N3440 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N3440?

250V

What is the maximum collector current rating?

1A

What package is the 2N3440 available in?

TO-205AD (TO-39) metal can, through-hole mounting

What is the operating junction temperature range?

-65°C to +200°C

Is the 2N3440 RoHS compliant?

RoHS3 compliant (unverified, low confidence)

What is the transition frequency of this transistor?

15 MHz

What is the DC current gain (hFE) at 20mA?

Minimum 40 at Ic=20mA, Vce=10V

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