| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,469 pcs
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25469 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3440 is a high-frequency, epitaxial planar NPN bipolar junction transistor designed for medium power switching and amplification applications. With a collector-emitter voltage rating of 250V and continuous collector current of 1A, it is suitable for high-voltage line drivers, relay drivers, and general purpose switching circuits. The device features low saturation voltage (Vce(sat) ≤ 0.5V at 50mA) and fast switching speeds (ton ≤ 1µs, toff ≤ 10µs). Power dissipation is 800mW at 25°C ambient, derated linearly to 0W at 200°C, and 5W at 25°C case temperature. The transistor is available in a hermetically sealed TO-39 (TO-205AD) metal can package with through-hole mounting. It is qualified to MIL-PRF-19500/368 for military and high-reliability applications, with JAN, JANTX, JANTXV, and JANS levels available. Commercial grade versions are RoHS compliant. The 2N3440 operates over a junction temperature range of -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.19 | $13.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Collector-emitter voltage (Vceo) is 250V, collector-base voltage (Vcbo) is 300V, and emitter-base voltage (Vebo) is 7V.
The 2N3440 is available in a TO-39 (TO-205AD) metal can package for through-hole mounting.
The operating junction temperature range is -65°C to 200°C.
RoHS compliant versions are available for commercial grade only, per the datasheet. Note: This information is unverified and has low confidence.
The continuous collector current (Ic) is 1A.
Power dissipation is 800mW at 25°C ambient temperature, and 5W at 25°C case temperature.
Turn-on time (ton) is 1µs maximum, turn-off time (toff) is 10µs maximum, with test conditions specified.