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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3439UA is an NPN bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage (Vce) of 350V and a maximum collector current (Ic) of 1A, making it suitable for medium-voltage switching and amplification applications.
With a DC current gain (hFE) of at least 40 at 20mA collector current and 10V Vce, and a low collector-emitter saturation voltage of 500mV at 4mA base current and 50mA collector current, this transistor offers efficient switching performance. The device can dissipate up to 800mW of power.
The 2N3439UA is housed in a surface-mount 4-SMD no-lead package, allowing for compact PCB designs. It operates over a junction temperature range of -65°C to 200°C, suitable for harsh environments. The part is RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $49.80 | $49.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 350V.
The maximum collector current (Ic) is 1A.
The junction operating temperature range is -65°C to 200°C.
It is available in a surface-mount 4-SMD no-lead package.
The minimum DC current gain is 40 at Ic=20mA and Vce=10V.
The maximum Vce saturation is 500mV at Ib=4mA and Ic=50mA.
The part is listed as RoHS3 compliant, but this status is unverified.