| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
349 pcs
|
349 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3439 is a silicon epitaxial planar NPN bipolar transistor from STMicroelectronics, supplied in a JEDEC TO-39 metal case. It is designed for consumer and industrial line-operated applications, particularly suited as a driver in high-voltage, low-current inverters, switching regulators, and series regulators.
Key electrical characteristics include a collector-base voltage of 450V, collector-emitter voltage of 350V, emitter-base voltage of 7V, and a continuous collector current of 1A. The DC current gain is a minimum of 40 at 20mA collector current and 10V collector-emitter voltage, and a minimum of 30 at 2mA. Collector-emitter saturation voltage is 500mV maximum at 50mA collector current with 4mA base current. Transition frequency is typically 15MHz.
The device dissipates up to 10W at case temperatures up to 25°C, derating to 1W at 50°C ambient, with a maximum junction temperature of 200°C. It is available in the through-hole TO-39 (TO-205AD) package, with a thermal resistance of 17.5°C/W junction-to-case and 175°C/W junction-to-ambient.
350V.
1A.
TO-39 (TO-205AD) through-hole.
200°C.
The database lists it as RoHS3 compliant, but this is unverified and conflicts with a distributor report of non-compliance.
10W at case temperature ≤25°C, 1W at ambient temperature ≤50°C.
Minimum 40 at Ic=20mA, Vce=10V; minimum 30 at Ic=2mA, Vce=10V.