SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The 2N3424 is a dual NPN silicon planar epitaxial transistor designed for low noise sense and high-frequency differential amplifier applications. It offers a minimum gain bandwidth product (fT) of 600 MHz at 4.0 mA and a typical noise figure (NF) of 3.5 dB at 60 Hz.
Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 3.0mA and a collector-emitter sustaining voltage (VCEO(sus)) of 15V. The device also features a tight base-emitter voltage differential of 5.0 mV maximum at 3.0 mA and a low temperature coefficient.
Absolute maximum ratings include a collector-to-base voltage (VCBO) of 30V, collector current (IC) of 50mA, and power dissipation up to 1.2W at 25°C case temperature. The transistor is housed in a TO-5 package.
This component is suitable for applications requiring precise differential amplification and low noise performance at high frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum gain bandwidth product (fT) for the 2N3424 is 600 MHz at 4.0 mA.
The typical noise figure (NF) of the 2N3424 is 3.5 dB at 60 Hz.
The maximum base-emitter voltage differential for the 2N3424 is 5.0 mV at 3.0 mA.
The maximum collector current for the 2N3424 is 50 mA.
The maximum collector-to-emitter voltage (VCEO) for the 2N3424 is 15V.
The 2N3424 is supplied in a TO-5 package.
