| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26 pcs
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26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3424 from TA-I Technology is a diffused silicon planar epitaxial transistor featuring a dual NPN configuration. It is engineered for applications requiring low noise and high frequency performance, particularly in differential amplifier circuits.
Key electrical characteristics include a minimum gain bandwidth product (fT) of 600 MHz at 4.0 mA and a typical noise figure (NF) of 3.5 dB at 60 Hz. The device also boasts excellent matching characteristics, with a base-to-emitter voltage differential change of only 20 nV/°C (max) over a wide temperature range.
Absolute maximum ratings specify a collector-to-emitter voltage (VCEO) of 15V and a continuous collector current (IC) of up to 50mA. The transistor is housed in a TO-5 package, suitable for through-hole mounting.
This component is ideal for sensitive analog signal processing where precise amplification and minimal noise are critical. Its high frequency capability makes it suitable for various communication and instrumentation systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gain bandwidth product (fT) of the 2N3424 is a minimum of 600 MHz at 4.0 mA.
The noise figure (NF) for the 2N3424 is typically 3.5 dB at 60 Hz.
The maximum continuous collector current (IC) for the 2N3424 is 50mA.
The 2N3424 is supplied in a TO-5 package.
The RoHS status of the 2N3424 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N3424 is Level 1.