| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3421 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose amplification and switching applications.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 80V, a continuous collector current (Ic) of 3A, and a maximum power dissipation of 1W. The DC current gain (hFE) is a minimum of 40 at Ic=1A and Vce=2V, and the Vce saturation voltage is a maximum of 500mV at Ib=200mA and Ic=2A.
The transistor is housed in a TO-5 metal can package (TO-205AA) with through-hole mounting. It operates over a junction temperature range of -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $25.61 | $25.61 |
| 25+ | $25.60 | $25.60 |
| 100+ | $23.78 | $23.78 |
| 250+ | $23.77 | $23.77 |
| 500+ | $23.44 | $23.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
3A.
1W.
TO-5 (TO-205AA) metal can, through-hole mounting.
-65°C to 200°C (junction).
Minimum 40 at Ic=1A, Vce=2V.
RoHS3 compliant (unverified).