2N3416 The 2N3416 is an NPN general purpose amplifier transistor from On Semiconductor. It features a 50V collector-emitter voltage rating, 500mA continuous collector current, and 625mW power dissipation in a TO-92-3 through-hole package.
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2N3416

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The 2N3416 is an NPN general purpose amplifier transistor from On Semiconductor. It features a 50V collector-emitter voltage rating, 500mA continuous collector current, and 625mW power dissipation in a TO-92-3 through-hole package.
Total Stock: 18 pcs

2N3416 Available from 1 distributor

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2N3416 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current (ICBO) @ Vcb=25V
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (Minimum/Maximum @ Ic=2 mA, Vce=4.5 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (IEBO) @ Veb=5V
Emitter-Base Voltage (VEBO)
Mounting Type
Operating Temperature
Power
Small-Signal Current Gain (hfe) @ Ic=2mA, Vce=4.5V, f=1kHz
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vbe Saturation (Max) @ Ib=3mA, Ic=50mA
Vce Saturation (Max) @ Ib, Ic
Voltage

2N3416 Description

Short technical summary and product information.

The 2N3416 is an NPN bipolar junction transistor designed for general purpose amplification and switching applications. Manufactured by On Semiconductor, this device is sourced from Process 10 and is suitable for collector currents up to 300 mA in typical amplifier circuits.

 

Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50V, collector-base voltage (VCBO) of 50V, and emitter-base voltage (VEBO) of 5.0V. The continuous collector current is rated at 500 mA, with a total device power dissipation of 625 mW. DC current gain (hFE) ranges from 75 to 225 at Ic=2mA and Vce=4.5V, with a maximum collector-emitter saturation voltage of 300 mV at Ib=3mA and Ic=50mA.

 

The transistor is housed in a TO-226-3, TO-92-3 (TO-226AA) through-hole package, with a supplier device package of TO-92-3. It operates over a junction temperature range of -55°C to 150°C, with a thermal resistance of 83.3°C/W junction-to-case and 200°C/W junction-to-ambient. The device is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).

2N3416 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N3416
Canonical Name: 2N3416 NPN General Purpose Amplifier Transistor
Subcategory: NPN General Purpose Amplifier

2N3416 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3416 Features

  • NPN general purpose amplifier transistor.
  • Rated for 50V collector-emitter voltage.
  • Supports 500mA continuous collector current.
  • 625mW maximum power dissipation.
  • Through-hole TO-92-3 package.

2N3416 Applications

  • General purpose signal amplification.
  • Low-current switching circuits.
  • Audio preamplifier stages.
  • Driver stages for relays or LEDs.

2N3416 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2N3416?

The maximum collector-emitter voltage (VCEO) is 50V.

What is the maximum collector current rating of the 2N3416?

The maximum continuous collector current is 500 mA.

What is the package type of the 2N3416?

The 2N3416 is available in a TO-226-3, TO-92-3 (TO-226AA) through-hole package, with a supplier device package of TO-92-3.

What is the operating temperature range of the 2N3416?

The operating junction temperature range is -55°C to 150°C.

Is the 2N3416 RoHS compliant?

Yes, the 2N3416 is listed as RoHS3 compliant, though this is unverified from a document source.

What is the DC current gain (hFE) range of the 2N3416?

The DC current gain (hFE) ranges from 75 to 225 at Ic=2mA and Vce=4.5V.

What is the maximum power dissipation of the 2N3416?

The maximum power dissipation is 625 mW.

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