LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3415 is a versatile NPN bipolar junction transistor (BJT) manufactured by Texas Instruments, suitable for general purpose amplification and switching tasks. It is designed to handle collector currents up to 500 mA.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 25V and a collector-base breakdown voltage (VCBO) of 25V. The emitter-base breakdown voltage (VEBO) is rated at 5.0V. This device offers a DC current gain (hFE) ranging from 180 to 540 under typical test conditions (VCE = 4.5V, IC = 2.0 mA).
Thermal performance is managed with a total device dissipation (PD) of 625 mW at 25°C, with a derating of 5.0 mW/°C above this temperature. The junction-to-case thermal resistance (RθJC) is 83.3 °C/W, and the junction-to-ambient thermal resistance (RθJA) is 200 °C/W. The operating and storage junction temperature range is from -55°C to +150°C.
The 2N3415 is supplied in a TO-92 package, commonly used for through-hole mounting. This package type is suitable for various electronic circuits requiring a compact and reliable transistor.
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) is 25V when the collector current is 10 mA and the base current is 0.
The continuous collector current (IC) is rated at 500 mA.
The DC current gain (hFE) ranges from 180 to 540 when tested at a collector-emitter voltage of 4.5V and a collector current of 2.0 mA.
The operating and storage junction temperature range is -55°C to +150°C.
The 2N3415 is supplied in a TO-92 package.
