| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2N333A is a silicon NPN transistor manufactured by GE. This component is categorized under Transistors - Bipolar (BJT) - Single and is suitable for applications requiring a breakdown voltage of up to 45V. The maximum collector current for this device is 0.025A, with a transition frequency below 1 MHz.
This transistor is classified as RoHS3 Compliant, indicating adherence to certain environmental standards. The Moisture Sensitivity Level (MSL) is 1, signifying unlimited shelf life under standard conditions. The REACH status is 'REACH Unaffected'.
Further specifications such as Collector-Emitter Saturation Voltage, DC Current Gain (hFE), and operating temperature are not detailed in the available information but are typically found in a comprehensive datasheet. The part is identified by its manufacturer part number 2N333A and is associated with the GE brand.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N333A is 0.025A.
The breakdown voltage for the 2N333A transistor is 45V.
The transition frequency for the 2N333A is less than 1 MHz.
The 2N333A transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N333A transistor is 1 Unlimited.
The REACH status for the 2N333A transistor is REACH Unaffected.