| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Delay Time | |
| Input Capacitance | |
| Mounting Type | |
| SVHC Present |
The Raytheon 2N3251 is a general-purpose NPN silicon bipolar junction transistor (BJT) housed in a TO-18 (TO-206AA) package. It is designed for a variety of amplification and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 40V and a maximum collector current (Ic) of 200mA. The device offers a DC forward current transfer ratio (hFE) ranging from 150 to 300, depending on the operating conditions. Saturation voltages are kept low, with VCE(sat) typically below 0.25V at 10mA collector current and 1.0mA base current.
With a current-gain bandwidth product (fT) of up to 300 MHz, the 2N3251 is suitable for moderate frequency applications. Its operating temperature range spans from -65°C to +200°C, and it has a low junction-to-case thermal resistance of 0.15°C/mW.
The TO-18 package is designed for through-hole mounting, making it suitable for traditional PCB assembly. This transistor is a reliable choice for engineers seeking a versatile component for signal amplification and switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Vceo is 40 Vdc.
The device can operate and be stored from -65°C to +200°C.
The 2N3251 is available in a TO-18 through-hole package.
The hFE ranges from 150 to 300 depending on collector current and test conditions.
The minimum current-gain bandwidth product (fT) is 250 MHz at IC=10mA, VCE=20V.
Typical switching times: delay 6ns, rise 12ns, storage 200ns, fall 250ns under specified test conditions.