BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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318 pcs
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318 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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91 pcs
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91 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The 2N3251 from Motorola Semiconductor is a general-purpose NPN silicon bipolar junction transistor (BJT). It is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 60V and a maximum collector current (IC) of 200mA. The device also features a maximum collector-base voltage (VCBO) of 60V and a maximum emitter-base voltage (VEBO) of 5V. Its DC forward current transfer ratio (hFE) ranges from 150 to 300 under specified test conditions.
Thermal performance is supported by a junction-to-case thermal resistance (R0JC) of 0.15 mW/°C and a junction-to-ambient thermal resistance (R0JA) of 0.49 mW/°C. The operating and storage temperature range is from -65°C to +200°C.
This transistor is suitable for various general-purpose amplification and switching applications where its specific voltage and current ratings are beneficial.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3251 is 40 Vdc.
The maximum Collector Current (IC) for the 2N3251 is 200 mAdc.
The operating and storage temperature range for the 2N3251 is -65 to +200 °C.
The 2N3251 is available in TO-18 and TO-206AA packages.
The minimum DC Forward Current Transfer Ratio (hFE) is 150, measured at IC=0.1mAdc and VCE=1.0Vdc.
The maximum Collector-Emitter Saturation Voltage is 0.25 Vdc, measured at IC=10mAdc and IB=1.0mAdc.
The minimum Current-Gain—Bandwidth Product (fT) is 250 MHz, measured at IC=10mAdc and VCE=20Vdc.