| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3251 from NJS is a general-purpose NPN silicon bipolar junction transistor (BJT) housed in a TO-18 (TO-206AA) package. This transistor is suitable for a wide range of electronic applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 60V and a continuous collector current (IC) of up to 200mA. The device offers a minimum current gain (hFE) ranging from 20 to 300 depending on the specific variant and test conditions. Its bandwidth product (fT) is rated at a minimum of 250 MHz for the 2N3250/2N3250A variants and 300 MHz for the 2N3251/2N3251A variants.
Thermal specifications indicate a maximum power dissipation of 0.36W to 2.06W at 25°C, with derating above that temperature. The operating and storage temperature range is from -65°C to +200°C. The transistor is designed for through-hole mounting.
Environmental compliance data indicates RoHS3 compliance, REACH unaffected status, and an MSL of 1. These specifications make the 2N3251 a versatile component for general-purpose amplification and switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60 Vdc.
The maximum collector current (IC) is 200 mAdc.
The 2N3251 is housed in a TO-18 through-hole package.
The operating and storage temperature range is -65°C to +200°C.
The minimum current-gain bandwidth product (fT) is 300 MHz at IC=10mA and VCE=20V.
The minimum DC forward current transfer ratio (hFE) is 150 at IC=1.0mA and VCE=1.0V.