| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3119 is a general purpose small signal transistor with an NPN polarity, constructed from silicon. It is designed for various electronic applications requiring reliable signal amplification and switching.
This transistor features a maximum collector current of 500 mA and a maximum collector-emitter voltage of 80 V. It has a power dissipation of 1 W at ambient temperature. The turn-on time is a maximum of 40 ns, and the turn-off time is a maximum of 700 ns, indicating good switching characteristics.
The 2N3119 is packaged in a TO-39 metal can package, suitable for through-hole mounting. The terminal configuration is bottom-wired, with wire terminal form and tin-lead plating. This transistor operates effectively in applications requiring robust performance and stable characteristics.
With a frequency capability exceeding 250 MHz, the 2N3119 is suitable for a range of RF and general-purpose applications. Its silicon construction ensures reliability and efficiency in signal processing circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the 2N3119 is 500 mA.
The maximum collector-emitter voltage for the 2N3119 is 80 V.
The 2N3119 transistor is housed in a TO-39 metal package.
The maximum turn-on time (ton) for the 2N3119 is 40 ns.
The maximum turn-off time (toff) for the 2N3119 is 700 ns.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.