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2N3108 NPN Bipolar Transistor, 60V collector-emitter breakdown voltage, 800mW power dissipation, in TO-39 through-hole package.
Mfr Part #:

2N3108

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN Bipolar Transistor, 60V collector-emitter breakdown voltage, 800mW power dissipation, in TO-39 through-hole package.
✓ Total Stock: 30 pcs
$ Price Range: $0.70

2N3108 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Partservice ✓
Non-Authorised Inventory information
30 pcs
On Request
30 pcs On Request 1 On Request On Request On Request On Request On Request
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2N3108 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N3108 Description

Short technical summary and product information.

The 2N3108 is an NPN bipolar junction transistor manufactured by On Semiconductor. It features a minimum collector-emitter breakdown voltage of 60V and a maximum power dissipation of 800mW. The DC current gain (hFE) is at least 40 at Ic=150mA and Vce=1V, with a maximum collector-emitter saturation voltage of 1V at Ib=100mA and Ic=1A. The transistor is housed in a TO-39 metal can package (TO-205AD) and is designed for through-hole mounting. It is listed as RoHS3 compliant and has an MSL rating of 1 (unlimited).

2N3108 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: 2N3108 NPN Bipolar Transistor
Subcategory: Single BJT Transistor

2N3108 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2N3108 Estimated Pricing

Qty Low High
200+ $0.70 $0.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3108 Features

  • NPN bipolar transistor with 60V breakdown.
  • 800mW maximum power dissipation.
  • Minimum DC current gain of 40.
  • Through-hole TO-39 metal can package.
  • RoHS3 compliant (unverified).

2N3108 Applications

  • Suitable for general-purpose switching applications.
  • Used in low-power amplifier circuits.
  • Ideal for signal amplification in audio equipment.
  • Applicable in driver stages for relays and solenoids.
  • Useful in voltage regulation and control circuits.

2N3108 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

Minimum 60V.

What is the package type?

TO-39 (TO-205AD) metal can, through-hole mounting.

Is the 2N3108 RoHS compliant?

RoHS3 compliant (unverified).

What is the DC current gain (hFE) at 150mA?

Minimum 40 at Ic=150mA, Vce=1V.

What is the maximum power dissipation?

800mW.

What is the maximum collector-emitter saturation voltage?

1V at Ib=100mA, Ic=1A.

What is the mounting type?

Through hole.

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