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2N3055G 2N3055G is an NPN silicon power transistor from On Semiconductor, rated for 60V collector-emitter voltage and 15A continuous collector current with 115W power dissipation.
Mfr Part #:

2N3055G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N3055G is an NPN silicon power transistor from On Semiconductor, rated for 60V collector-emitter voltage and 15A continuous collector current with 115W power dissipation.
✓ Total Stock: 3 pcs
$ Price Range: $3.71 - $5.55

2N3055G Available from 1 distributor

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✓ Non-Authorised
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3 pcs
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2N3055G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Operating Temperature Range
Power
Power Dissipation
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N3055G Description

Short technical summary and product information.

The 2N3055G is a complementary silicon NPN power transistor designed for general-purpose switching and amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 60 V and a continuous collector current rating of 15 A, with a total power dissipation of 115 W at a case temperature of 25°C.

 

Key electrical characteristics include a DC current gain (hFE) of 20 to 70 at 4 A collector current, a collector-emitter saturation voltage of 1.1 V maximum at 4 A, and a transition frequency of 2.5 MHz. The device is housed in a TO-204AA (TO-3) through-hole package and is supplied in trays of 100 units.

 

The 2N3055G is the Pb-Free version of the industry-standard 2N3055, making it suitable for designs requiring RoHS compliance. It is commonly used in power switching circuits, linear amplifiers, and voltage regulation applications.

2N3055G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2N3055
Canonical Name: 2N3055G NPN Silicon Power Transistor
Subcategory: Single Bipolar Junction Transistor

2N3055G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

2N3055G Estimated Pricing

Qty Low High
1+ $5.55 $5.55
10+ $3.71 $3.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N3055G Features

  • NPN silicon power transistor for switching and amplifier applications.
  • Rated for 60V collector-emitter voltage and 15A continuous current.
  • 115W power dissipation at 25°C case temperature.
  • DC current gain of 20 to 70 at 4A collector current.
  • Pb-Free package available for RoHS compliance.

2N3055G Applications

  • General-purpose power switching circuits.
  • Linear amplifier output stages.
  • Voltage regulator and power management designs.
  • Motor and actuator drive circuits.
  • Audio amplifier power output stages.

2N3055G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2N3055G?

The maximum collector-emitter voltage (VCEO) is 60 V.

What is the continuous collector current rating of the 2N3055G?

The maximum continuous collector current is 15 A.

What is the power dissipation of the 2N3055G?

The total power dissipation is 115 W at a case temperature of 25°C.

What package does the 2N3055G come in?

The 2N3055G is available in a TO-204AA (TO-3) through-hole package.

What is the operating temperature range of the 2N3055G?

The operating and storage junction temperature range is -65°C to 200°C.

Is the 2N3055G RoHS compliant?

The 2N3055G is marked as RoHS3 Compliant and Pb-Free, but this status is unverified.

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