| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The 2N3055 from Motorola Semiconductor is a silicon Epitaxial-Base Planar NPN transistor housed in a TO-3 metal case. It is designed for applications such as power switching circuits, series and shunt regulators, output stages, and high-fidelity amplifiers. This complementary power transistor offers a maximum collector-emitter voltage of 60V and a maximum collector current of 15A.
Key specifications include a total power dissipation of 115W and an operating temperature range from -65°C to +200°C. The transistor exhibits a DC current gain (hFE) of up to 70 and operates at frequencies up to 3 MHz. It is mounted via chassis mount.
The 2N3055 is intended for use in various power applications where robust performance and reliability are essential. Its complementary PNP type is the MJ2955.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 60V.
The 2N3055 is available in a TO-204AA (TO-3) package.
The operating temperature range is -65°C to +200°C.
The maximum collector current (Ic) is 15A.
The total power dissipation (Pd) is 115W.
The DC current gain (hFE) is up to 70.
The transition frequency (fT) is 3 MHz.