2N3055 The 2N3055 is an NPN silicon power transistor from STMicroelectronics rated for 60V collector-emitter voltage and 15A collector current.
Mfr Part #:

2N3055

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The 2N3055 is an NPN silicon power transistor from STMicroelectronics rated for 60V collector-emitter voltage and 15A collector current.
Total Stock: 2,012 pcs

2N3055 Available from 3 distributors

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2,006 pcs
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2N3055 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base-Emitter Voltage (VBE)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-Case (Rthj-case)
Transistor Type
Transition Frequency (fT)
Vce Sat (Maximum @ IC = 4 A, IB = 400 mA)
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum @ IC = 10 A, VCE = 4 V)

2N3055 Description

Short technical summary and product information.

The 2N3055 is a silicon Epitaxial-Base Planar NPN power transistor mounted in a JEDEC TO-3 metal case. It is designed for power switching circuits, series and shunt regulators, output stages, and high fidelity amplifiers.

 

Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 60V, a maximum collector current of 15A, and a total power dissipation of 115W at case temperature ≤25°C. The DC current gain (hFE) is a minimum of 20 at 4A collector current and 4V collector-emitter voltage. The transition frequency (fT) is a minimum of 3 MHz.

 

The device is chassis mount and comes in a TO-204AA / TO-3 package. The complementary PNP type is the MJ2955.

2N3055 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2N3055 NPN Silicon Power Transistor
Subcategory: Single BJT

2N3055 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3055 Features

  • NPN silicon power transistor design.
  • Rated for 60V collector-emitter voltage.
  • Handles up to 15A collector current.
  • Dissipates up to 115W power.
  • Chassis mount TO-3 metal package.

2N3055 Applications

  • Used in power switching circuits.
  • Ideal for series and shunt regulators.
  • Suitable for output stage amplifiers.
  • Works in high fidelity audio amplifiers.

2N3055 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2N3055?

The maximum collector-emitter voltage (VCEO) is 60V.

What is the maximum collector current rating?

The maximum collector current (IC) is 15A.

What is the power dissipation of the 2N3055?

The maximum power dissipation (Ptot) is 115W at case temperature ≤25°C.

What package does the 2N3055 come in?

The 2N3055 is available in a TO-204AA / TO-3 package for chassis mounting.

What is the operating junction temperature range?

The maximum operating junction temperature (Tj) is 200°C.

Is the 2N3055 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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