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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-Emitter Voltage (VBE) @ Ic, Vce | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCER) (RBE ≤ 100Ω) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Maximum Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Second Breakdown Collector Current (Is/b) | |
| Storage Temperature Range (TSTG) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-Case (Rthj-case) | |
| Transistor Type | |
| Vce Sat (Maximum @ Ib=400 mA, Ic=4 A) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| ft (Typical @ Ic=0.5 A, Vce=10 V) | |
| hfe (Minimum @ IC = 10 A, VCE = 4 V) | |
| hfe (Minimum/Typical @ Ic=4 A, Vce=4 V) |
2N3055 is a silicon epitaxial-base planar NPN power transistor designed for general-purpose power applications. It features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) rating of 15A. The device is housed in a JEDEC TO-3 metal case with through-hole mounting, providing excellent thermal performance. With a maximum power dissipation of 115W (at case temperature ≤25°C) and a junction-to-case thermal resistance of 1.5°C/W, the 2N3055 is well-suited for power switching circuits, series and shunt regulators, output stages, and high-fidelity audio amplifiers. The transistor offers a DC current gain (hFE) range from 20 (minimum at 4A/4V) to 70 typical, and a transition frequency (fT) of 2.5 to 3 MHz. The complementary PNP type is MJ2955.
The maximum VCEO is 60V.
It is available in TO-204AA / TO-3 through-hole package.
The junction temperature range is -65°C to 200°C.
RoHS status is reported as RoHS3 compliant but has not been verified.
The maximum power dissipation (Ptot) at case temperature ≤25°C is 115W.
At Ic=4A, Vce=4V, the minimum hFE is 20 with a typical value of 70. At Ic=10A, Vce=4V, the minimum hFE is 5.