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2N3055 2N3055 is an NPN silicon power transistor rated for 60V VCEO and 15A of collector current. It comes in a TO-3 metal case and dissipates up to 115W.
Mfr Part #:

2N3055

Available from 2 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
2N3055 is an NPN silicon power transistor rated for 60V VCEO and 15A of collector current. It comes in a TO-3 metal case and dissipates up to 115W.
✓ Total Stock: 60,005 pcs

2N3055 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
60,000 pcs
On Request
60000 pcs On Request 1 On Request On Request On Request On Request On Request
HMB Electronics LLC ✓
Non-Authorised Inventory information
5 pcs
On Request
5 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N3055 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2N3055 Description

Short technical summary and product information.

2N3055 is a silicon epitaxial-base planar NPN power transistor designed for general-purpose power applications. It features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) rating of 15A. The device is housed in a JEDEC TO-3 metal case with through-hole mounting, providing excellent thermal performance. With a maximum power dissipation of 115W (at case temperature ≤25°C) and a junction-to-case thermal resistance of 1.5°C/W, the 2N3055 is well-suited for power switching circuits, series and shunt regulators, output stages, and high-fidelity audio amplifiers. The transistor offers a DC current gain (hFE) range from 20 (minimum at 4A/4V) to 70 typical, and a transition frequency (fT) of 2.5 to 3 MHz. The complementary PNP type is MJ2955.

2N3055 Quick Information

Product Type: NPN Power Transistor
Canonical Name: 2N3055 NPN Silicon Power Transistor
Subcategory: Power Transistors

2N3055 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N3055 Features

  • High current NPN silicon power transistor.
  • Rated for 60V collector-emitter voltage.
  • Handles up to 15A collector current.
  • Dissipates up to 115W of power.
  • Available in TO-3 metal case.

2N3055 Applications

  • Ideal for power switching circuits.
  • Used in series and shunt regulators.
  • Suitable for output stages in audio amplifiers.
  • Designed for high fidelity amplifier applications.

2N3055 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2N3055?

The maximum VCEO is 60V.

What is the package type of the 2N3055?

It is available in TO-204AA / TO-3 through-hole package.

What is the operating temperature range of the 2N3055?

The junction temperature range is -65°C to 200°C.

Is the 2N3055 RoHS compliant?

RoHS status is reported as RoHS3 compliant but has not been verified.

What is the maximum power dissipation of the 2N3055?

The maximum power dissipation (Ptot) at case temperature ≤25°C is 115W.

What is the DC current gain (hFE) of the 2N3055?

At Ic=4A, Vce=4V, the minimum hFE is 20 with a typical value of 70. At Ic=10A, Vce=4V, the minimum hFE is 5.

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