LM431ACZXA
On Semiconductor
The LM431ACZXA from On Semiconductor is an adjustable shunt voltage reference. It offers a wide output voltage range and is suitable for various power management applications.
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95 pcs
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95 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ISSI 2N3054 is a silicon NPN power transistor manufactured using an epitaxial base process. It is housed in a hermetically sealed metal TO-66 case, making it suitable for general purpose amplifier and switching applications.
Key electrical specifications include a maximum Collector-Base Voltage (VCBO) of 90V and a maximum Collector-Emitter Voltage (VCEO) of 55V. The device can handle a continuous collector current (IC) of up to 4.0A and a continuous base current (IB) of up to 2.0A. Power dissipation is rated at 25W for the 2N3054 variant.
Thermal characteristics include a thermal resistance junction-to-case (ΘJC) of 7.0 °C/W for the 2N3054. The operating and storage junction temperature range is -65 to +200 °C. The transistor is designed for through-hole mounting.
This transistor is suitable for various amplifier and switching applications where robust power handling and specific voltage and current ratings are required. Its construction ensures reliability in demanding environments.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (VCBO) for the 2N3054 is 90V.
The continuous collector current (IC) for the 2N3054 is 4.0A.
The 2N3054 transistor comes in a TO-66 case.
The operating and storage junction temperature range for the 2N3054 is -65 to +200 °C.
The thermal resistance (junction-to-case) for the 2N3054 is 7.0 °C/W.
