| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3054 is a silicon NPN bipolar junction transistor designed for power switching and amplification applications. It offers a maximum collector-emitter breakdown voltage of 55V and can handle a continuous collector current of up to 4A. With a maximum power dissipation of 25W, this device is suitable for medium-power circuits.
Electrical characteristics include a minimum DC current gain (hFE) of 25 at 500mA collector current and 4V collector-emitter voltage. The maximum collector-emitter saturation voltage is 6V at a base current of 1A and collector current of 3A. The transition frequency is 3 MHz.
The transistor is housed in a TO-66 metal can package (also known as TO-213AA) and features through-hole mounting. It has an operating junction temperature range of -65°C to 200°C.
The maximum collector-emitter breakdown voltage (Vce) is 55V.
The maximum continuous collector current (Ic) is 4A.
The maximum power dissipation is 25W.
It uses a TO-66 (TO-213AA) through-hole metal can package.
The operating junction temperature range is -65°C to 200°C.
The minimum DC current gain (hFE) is 25 at Ic=500mA and Vce=4V.
The transition frequency (ft) is 3 MHz.