| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The 2N3053 from ITT Cannon is an NPN Silicon Planar Transistor designed for general-purpose applications. This component features a Collector Emitter Voltage (VCEO) rating of up to 60V and a continuous Collector Current (IC) of 0.7A.
The transistor is housed in a TO-39 Metal Can Package, suitable for through-hole mounting. Key electrical characteristics include a DC Current Gain (hFE) ranging from 50 to 250 and a Current Gain Bandwidth Product (fT) of over 25 MHz.
With a Power Dissipation (PD) of 5W at 25°C and a Junction to Case Thermal Resistance (Rth(j-c)) of 35°C/W, it is designed for moderate power handling. The operating and storage junction temperature range is -65°C to +200°C.
This device is also noted for its specific electrical characteristics such as Collector Emitter Saturation Voltage (VCE(sat)) below 1.4V and Base Emitter Saturation Voltage (VBE(sat)) below 1.7V, making it suitable for various switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N3053 has a maximum Collector Emitter Voltage (VCEO) of 60V.
The continuous Collector Current (IC) for the 2N3053 is 0.7A.
The 2N3053 is available in a TO-39 Metal Can Package.
The operating and storage junction temperature range for the 2N3053 is -65°C to +200°C.
The DC Current Gain (hFE) for the 2N3053 is greater than 50 at IC=150mA, VCE=2.5V, and greater than 100 at IC=150mA, VCE=10V.
The Current Gain Bandwidth Product (fT) for the 2N3053 is greater than 25 MHz.