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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3019SJANTX is a silicon NPN transistor manufactured by VPT, offered in a hermetically sealed TO-39 metal can package. This transistor is suitable for general purpose and low power applications.
Key electrical specifications include a Collector-Emitter Voltage (VCEO) of 80V, a continuous Collector Current (IC) of 1A, and a maximum Power Dissipation of 5W at 25°C case temperature. The DC Current Gain (hFE) ranges from 15 to 400 depending on the operating conditions.
It also offers a high-frequency current gain magnitude of 5-20 at 20 MHz and a saturated turn-on time of 30 ns. The operating junction temperature ranges from -65°C to +200°C, with a storage temperature range of the same limits.
This transistor is available in various qualification levels, including JAN, JANTX, JANTXV, and JANS, with screening and processing per MIL-PRF-19500 Appendix E. Radiation testing is available upon request.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2N3019SJANTX is 80V.
The continuous Collector Current (IC) rating for the 2N3019SJANTX is 1A.
The 2N3019SJANTX comes in a hermetically sealed TO-39 metal can package.
The operating junction temperature range for the 2N3019SJANTX is -65°C to +200°C.
The 2N3019SJANTX is available in JAN, JANTX, JANTXV, and JANS qualification levels.