| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,241 pcs
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10241 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The SEMICOA 2N3019J is a silicon NPN transistor suitable for general purpose and low power applications. It is housed in a hermetically sealed TO-5 metal can package, ensuring reliability in various environments.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 80V and a continuous Collector Current (IC) of 1A. The transistor offers a DC Current Gain (hFE) ranging from 15 to 100 depending on the operating conditions. Saturation voltages are also specified, with VBEsat at a maximum of 1.1V and VCEsat at 0.2V or 0.5V under different current levels.
Thermal specifications include a maximum power dissipation of 0.8W at 25°C ambient temperature and 5.0W at 25°C case temperature. The operating junction temperature ranges from -65°C to +200°C.
This transistor is available in various qualification levels, including JAN, JANTX, JANTXV, and JANS, per MIL-PRF-19500 Appendix E. Radiation testing is also available upon request.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 80V.
The continuous collector current (IC) is rated at 1A maximum.
The package is TO-5 (through-hole).
The operating junction temperature ranges from -65°C to +200°C.
The minimum hFE is 100 at IC = 150mA, VCE = 10V.
VCE(sat) is 0.2V maximum at IC = 150mA, IB = 15mA.
Power dissipation is 5.0W maximum when TC = 25°C, derated linearly above 25°C.