| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3019A is an NPN silicon bipolar junction transistor designed for general-purpose amplification and switching applications. It features a collector-emitter breakdown voltage (VCEO) of 80V and a continuous collector current rating of 1A, making it suitable for medium-power circuits.
With a power dissipation of 800mW at 25°C ambient temperature, the device can handle moderate power levels in linear and switching designs. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V VCE, ensuring consistent amplification performance. The collector-emitter saturation voltage is a maximum of 500mV at 50mA base current and 500mA collector current, supporting efficient low-voltage switching.
The transistor is packaged in a through-hole TO-5AA metal can (TO-205AA case style), which provides robust mechanical protection and good thermal performance. The operating junction temperature range spans -65°C to +200°C, allowing use in harsh environments.
| Qty | Low | High |
|---|---|---|
| 100+ | $12.15 | $12.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 80V.
The maximum continuous collector current is 1A.
The 2N3019A is available in a through-hole TO-5AA metal can package (TO-205AA case style).
The operating junction temperature range is -65°C to +200°C.
The 2N3019A is listed as RoHS3 compliant, but this status is unverified.
The minimum DC current gain (hFE) is 100 at 150mA collector current and 10V VCE.
The collector-emitter saturation voltage is a maximum of 500mV at 50mA base current and 500mA collector current.