| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight |
The 2N3019 is a low-power NPN silicon transistor designed for general-purpose switching and amplification applications. It features a collector-emitter voltage (VCEO) of 80V, collector current (IC) of 1A, and a DC current gain (hFE) of 100 minimum at 150mA. The transistor offers a transition frequency (fT) of 100MHz, making it suitable for moderate-speed switching. The device is housed in a through-hole TO-5 (TO-205AD) package, with the supplier device package listed as TO-39. It is RoHS compliant by design and qualified per MIL-PRF-19500/391 for high-reliability applications. The operating junction temperature range is -65°C to 200°C, with a maximum power dissipation of 0.8W at 25°C ambient (derated linearly).
80V.
Through-hole TO-5 (TO-205AD) package, also available in TO-39.
-65°C to 200°C junction and storage temperature.
Yes, RoHS compliant by design per the datasheet.
Minimum 100 at Ic=150mA, Vce=10V.
100 MHz.
1 A.